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AEGIS
SEMICONDUTORES LTDA.
A5A:870.XX
VOLTAGE RATINGS
Part Number A5A:870.24 A5A:870.26 A5A:870.28 A5A:870.30 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175OC 2400 2600 2800 3000 TJ = -40 to 0 C 2400 2600 2800 2900
O
VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175 C 2500 2700 2900 3100
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 675 125 1350 10.70 IFSM Max. Peak non-rep. surge current 11.67 kA 12.75 13.90 523 I2t Max. I2t capability 570 739 806 It
2 1/2
O
UNITS
O O
NOTES O 180 half sine wave
C C A C A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms
IF(RMS) Nom. RMS current
O Initial T J = 175 C, rated VRRM applied after surge.
Initial T J = 175OC, no voltage applied after surge. Initial T J = 175O C, rated VRRM applied after surge.
O Initial T J = 175 C, no voltage applied after surge.
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
t = 8.3 ms Initial T J = 175OC, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
8830 900
AEGIS
SEMICONDUTORES LTDA.
A5A:870.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.75 --------15 --------85(3.0) TO-200AB MAX. UNITS 1.94 0.85 0.864 0.54 0.658 50 0.038 0.045 0.046 0.02 --O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 2121A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 O Max. Rated VRRM C.
O
V V mW mA
C/W DC operation, double side C/W 180O sine wave, double side C/W 120 rectangular wave, duble side
O
O
O
C/W Mtg. Surface smooth, flat and greased. Double side. -----
g(oz.) JEDEC
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 0 100 200 300 400 500 600 700 800 900
*Sinusoidal waveform 30 60 90 120 180
Maximum Allowable Case Temperature
170 160 150 140 130 120 110 100 90
DC 30 60 90 120 180
80
*Rectangular waveform
0
200
400
600
800
1000
1200
1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:870.XX
Maximum Average Forward Power Loss
14000
30
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
18000 16000 14000 12000 10000
60
12000 10000 8000
60
8000 6000 4000 2000 0 0 200 400 600 800 1000 1200 1400
*Sinusoidal waveform 90 120 180
6000
90
4000 2000 0
*Rectangular waveform
120 180 DC
0
200
400
600
800
1000
1200
1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
10000
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
1000
0.01
125C
25C
100 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:870.XX
TO-200AB
Fig. 7 - Outline Characteristics

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